Semiconductor trench MOS devices

Details Semiconductor trench MOS devices Semiconductor trench MOS devices

1999-02-22

2000-06-20

Nelms, David

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438270, 438272, 438589, H01L 21336, H01L 213205

Patent

active

060777443

ABSTRACT:
In a semiconductor device, a trench is etched into a surface of a semiconductor body comprising, from the surface down, a highly doped first (source) region; a moderately doped second (body) region; and a lightly doped third (drain) region. The trench walls are then oxidized. For reducing the effects of etching rate and oxide growing rate variations which occur at the junctions between regions of differing concentrations, the trench is first formed by etching and the trench walls then oxidized prior to the formation of the first region. Trenches having straighter walls and more uniformly thick oxides are thus formed.

REFERENCES:
patent: 5733810 (1998-03-01), Baba et al.
patent: 5770514 (1998-06-01), Matsuda et al.
patent: 5918114 (1999-06-01), Choi et al.

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