Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-08-30
2009-02-17
Smith, Zandra (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S346000, C257S327000, C257S410000
Reexamination Certificate
active
07492006
ABSTRACT:
Semiconductor devices having a transistor and methods of fabricating such devices are disclosed. The device may include a gate pattern formed on a substrate, spacers formed on sidewalls of the gate pattern, a surface insulation layer that may contact the substrate is interposed between the spacers and the substrate. An inversion layer is provided in the surface region of the substrate under the surface insulation layer. The surface insulation layer is formed of a material generating large quantities of surface states at an interface between the substrate and the surface insulation layer.
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Notice to File a Response/Amendment to the Examination Report in Korean Application No. 10-2005-0047877; date of mailing Aug. 24, 2006.
English translation of Notice to File a Response/Amendment to the Examination Report in Korean Application No. 10-2005-0047877; date of mailing Aug. 24, 2006.
Buh Gyoung-Ho
Hyun Sang-Jin
Shin Yu-Gyun
Yon Guk-Hyon
Myers Bigel & Sibley & Sajovec
Patton Paul E
Samsung Electronics Co,. Ltd.
Smith Zandra
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