Semiconductor transistors having high-K gate dielectric...

Details Semiconductor transistors having high-K gate dielectric... Semiconductor transistors having high-K gate dielectric...

2008-01-14

2010-02-23

Menz, Laura M (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S422000, C438S197000

Reexamination Certificate

active

07666746

ABSTRACT:
A semiconductor structure and a method for forming the same. The structure includes (i) a semiconductor substrate which includes a channel region, (ii) first and second source/drain regions on the semiconductor substrate, (iii) a gate dielectric region, and (iv) a gate electrode region, (v) a plurality of interconnect layers on the gate electrode region, and (vi) first and second spaces. The gate dielectric region is disposed between and in direct physical contact with the channel region and the gate electrode region. The gate electrode region is disposed between and in direct physical contact with the gate dielectric region and the interconnect layers. The first and second spaces are in direct physical contact with the gate electrode region. The first space is disposed between the first source/drain region and the gate electrode region. The second space is disposed between the second source/drain region and the gate electrode region.

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