Semiconductor transistor using L-shaped spacer

Details Semiconductor transistor using L-shaped spacer Semiconductor transistor using L-shaped spacer

2005-07-12

2005-07-12

Thompson, Craig A. (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S335000, C257S336000, C257S337000, C257S339000, C257S343000, C257S344000, C257S346000

Reexamination Certificate

active

06917085

ABSTRACT:
The present invention provides a semiconductor transistor using an L-shaped spacer. The semiconductor transistor includes a gate pattern formed on a semiconductor substrate and an L-shaped third spacer formed beside the gate pattern and having a horizontal protruding portion. An L-shaped fourth spacer is formed between the third spacer and the gate pattern, and between the third spacer and the substrate. A high-concentration junction area is positioned in the substrate beyond the third spacer, and a low-concentration junction area is positioned under the horizontal protruding portion of the third spacer. A medium-concentration junction area is positioned between the high- and low-concentration junction areas.

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Peter Van Zant; Microchip Fabrication—A practical guide to Semiconductor Processing (2000), McGraw-Hill, Fourth Edition, pp. 348-349.

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