Semiconductor surface resistivity probe with semiconductor tempe

Details Semiconductor surface resistivity probe with semiconductor tempe Semiconductor surface resistivity probe with semiconductor tempe

1992-06-11

1993-11-09

Strecker, Gerard R.

Electricity: measuring and testing

Impedance, admittance or other quantities representative of...

Lumped type parameters

324158R, 324703, 324715, G01R 2708, G01N 2714

Patent

active

052606686

ABSTRACT:
The resistivity of the surface of a semiconductor wafer is measured at different temperatures to determine the resistivity as a function of temperature. The temperature of the semiconductor wafer is varied by a heater in thermal contact with the semiconductor wafer, and the temperature is measured by a temperature sensor in thermal contact with the semiconductor. The heater is controlled by a control unit which adjusts the amount of heat provided by the heater, thereby controlling the temperature at which a measurement from a four-point resistivity probe is taken.

REFERENCES:
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patent: 4888818 (1989-12-01), Schmitt et al.
patent: 4888987 (1989-12-01), Zhang
patent: 4989154 (1991-01-01), Yamashita et al.

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