Semiconductor substrate with trenches of varying depth

Details Semiconductor substrate with trenches of varying depth Semiconductor substrate with trenches of varying depth

2005-08-23

2005-08-23

Goudreau, George A. (Department: 1763)

Etching a substrate: processes

Gas phase etching of substrate

Irradiating, ion implanting, alloying, diffusing, or...

C216S072000, C216S095000, C438S705000, C438S717000, C438S740000

Reexamination Certificate

active

06932916

ABSTRACT:
A method for etching trenches having different depths on a semiconductor substrate includes providing a mask with first and second openings. The first and second openings are located where corresponding first and second trenches are to be etched. A slow-etch region, made of a slow-etch material, is provided above the substrate at a location corresponding to the second opening. When exposed to a selected etchant, the slow-etch material is etched at a rate less than the rate at which the semiconductor substrate is etched when exposed to the selected etchant.

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