Active solid-state devices (e.g. – transistors – solid-state diode – Test or calibration structure
Reexamination Certificate
2007-04-04
2009-08-11
Nguyen, Kiet T (Department: 2881)
Active solid-state devices (e.g., transistors, solid-state diode
Test or calibration structure
C257S203000, C257S207000, C324S754090
Reexamination Certificate
active
07573066
ABSTRACT:
A semiconductor substrate inspection method includes: generating a charged particle beam, and irradiating the charged particle beam to a semiconductor substrate in which contact wiring lines are formed on a surface thereof, the contact wiring lines of the semiconductor substrate being designed to alternately repeat in a plane view so that one of the adjacent contact wiring lines is grounded to the semiconductor substrate and the other of the adjacent contact wiring lines is insulated from the semiconductor substrate; detecting at least one of a secondary charged particle, a reflected charged particle and a back scattering charged particle generated from the surface of the semiconductor substrate to acquire a signal; generating an inspection image with the signal, the inspection image showing a state of the surface of the semiconductor substrate; and judging whether the semiconductor substrate is good or bad from a difference of brightness in the inspection image obtained from the surfaces of the adjacent contact wiring lines.
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Hayashi Hiroyuki
Kadota Kenichi
Kozaki Hisaki
Nagai Takamitsu
Noda Tomonobu
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Kabushiki Kaisha Toshiba
Nguyen Kiet T
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