Semiconductor substrate structure and processing method thereof

Details Semiconductor substrate structure and processing method thereof Semiconductor substrate structure and processing method thereof

2007-12-04

2007-12-04

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257SE21705

Reexamination Certificate

active

11081527

ABSTRACT:
A semiconductor substrate structure includes a substrate having a trench formed thereon, a polymer composite material supplied into the trench and an electroplate conductive layer formed on the substrate. Further, a semiconductor substrate processing method includes the steps of: providing a substrate forming a trench thereon, supplying a polymer composite material into the trench, polishing a surface of the substrate and forming a covering material on the surface of the substrate. Therefore, the method is provided for combining the polymer composite material into the substrate, thereby to raise cutting precision and strength of the semiconductor substrate structure.

REFERENCES:
patent: 7094661 (2006-08-01), Lee et al.
patent: 2003/0060034 (2003-03-01), Beyne et al.
patent: 2005/0067688 (2005-03-01), Humpston

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