Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Multiple layers
Reexamination Certificate
2005-01-11
2005-01-11
Lebentritt, Michael (Department: 2824)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Multiple layers
C438S763000, C438S765000, C438S769000
Reexamination Certificate
active
06841490
ABSTRACT:
A substrate for a semiconductor device includes a crystalline silicon substrate; an insulative silicon compound layer thereon and a crystalline insulation layer on the insulative silicon compound layer, wherein the insulative silicon compound layer contains not more than 10 at % of component element of a material constituting the crystalline insulation layer, the component element being provided in the insulative silicon compound layer by diffusion.
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Fukui Tetsuro
Matsuda Takanori
Unno Akira
Wasa Kiyotaka
Yonehara Takao
Canon Kabushiki Kaisha
Fitzpatrick ,Cella, Harper & Scinto
Lebentritt Michael
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