Etching a substrate: processes – Nongaseous phase etching of substrate
Patent
1995-08-10
1998-08-18
Tung, T.
Etching a substrate: processes
Nongaseous phase etching of substrate
134 2, 134 42, 216 96, 216 99, 216101, H01L 2102
Patent
active
057954941
ABSTRACT:
Semiconductor substrates are immersed in pure water having a lowered dissolved-oxygen concentration and heated to a temperature above 60.degree. C., in an atmosphere which keeps the dissolved oxygen concentration in pure water, in order to etch oxide films on surfaces of the semiconductor substrates for cleaning the surfaces of the semiconductor substrates. According to the present invention, contaminants and residual chemicals can be effectively removed without adding any chemical treating step. The cleaning can be effective without increasing the number of chemicals, and improved throughputs of the cleaning step can be obtained.
REFERENCES:
patent: 4722752 (1988-02-01), Steck
patent: 5176756 (1993-01-01), Nakashima et al.
patent: 5451267 (1995-09-01), Stadler et al.
patent: 5464480 (1995-11-01), Matthews
patent: 5567244 (1996-10-01), Lee et al.
Journal of the Electrochemical Society, vol. 140, No. 3, Mar. 1993, T. Ohmi et al., "Native Oxide Growth and Organic Impurity Removal on Si Surface with Ozone-Injected Ultrapure Water"--pp. 804-810.
Fujimura Shuzo
Hayami Yuka
Mori Haruhisa
Ogawa Hiroki
Okui Yoshiko
Fujitsu Limited
Tung T.
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