Semiconductor substrate and process for producing it

Details Semiconductor substrate and process for producing it Semiconductor substrate and process for producing it

2005-06-21

2009-02-17

Hoang, Quoc D (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S018000, C257SE29193

Reexamination Certificate

active

07491966

ABSTRACT:
A process for producing a semiconductor substrate comprising a carrier wafer and a layer of single-crystalline semiconductor material:a) producing a layer containing recesses at the surface of a donor wafer of single-crystalline semiconductor material,b) joining the surface of the donor wafer containing recesses to the carrier wafer,c) heat treating to close the recesses at the interface between the carrier wafer and the donor wafer to form a layer of cavities within the donor wafer, andd) splitting the donor wafer along the layer of cavities, resulting in a layer of semiconductor material on the carrier wafer. Semiconductor substrates prepared thusly may have a single-crystalline semiconductor layer having a thickness of 100 nm or less, a layer thickness uniformity of 5% or less, and an HF defect density of 0.02/cm2or less.

REFERENCES:
patent: 6136684 (2000-10-01), Sato et al.
patent: 2006/0097317 (2006-05-01), Dantz et al.
patent: 10131 249 (2002-05-01), None
patent: 553 852 (2003-08-01), None
patent: 1 427 010 (2004-06-01), None
patent: WO 03/003 430 (2003-01-01), None

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