Semiconductor substrate and process for producing it

Details Semiconductor substrate and process for producing it Semiconductor substrate and process for producing it

2007-10-09

2007-10-09

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S018000, C257S190000, C257SE29193

Reexamination Certificate

active

11266164

ABSTRACT:
A semiconductor substrate useful as a donor wafer is a single-crystal silicon wafer having a relaxed, single-crystal layer containing silicon and germanium on its surface, the germanium content at the surface of the layer being in the range from 10% by weight to 100% by weight, and a layer of periodically arranged cavities below the surface. The invention also relates to a process for producing this semiconductor substrate and to an sSOI wafer produced from this semiconductor substrate.

REFERENCES:
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patent: 5534713 (1996-07-01), Ismail et al.
patent: 6524935 (2003-02-01), Canaperi et al.
patent: 2004/0005740 (2004-01-01), Lochtefeld et al.
patent: 2004/0142542 (2004-07-01), Murphy et al.
patent: 0 533 551 (1993-03-01), None
patent: 1 365 447 (2003-11-01), None
patent: WO 03/003430 (2003-01-01), None
patent: WO 2004/021420 (2004-03-01), None

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