Semiconductor substrate and method for production thereof

Details Semiconductor substrate and method for production thereof Semiconductor substrate and method for production thereof

2008-05-14

2011-10-25

Matthews, Colleen (Department: 2811)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Total dielectric isolation

C438S479000, C438S480000, C257SE21563, C257SE21561

Reexamination Certificate

active

08043929

ABSTRACT:
Hetero-semiconductor structures possessing an SOI structure containing a silicon-germanium mixed crystal are produced at a low cost and high productivity. The semiconductor substrates comprise a first layer formed of silicon having germanium added thereto, a second layer formed of an oxide and adjoined to the first layer, and a third layer derived from the same source as the first layer, but having an enriched content of germanium as a result of thermal oxidation and thinning of the third layer.

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