Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-10-05
2009-02-24
Smith, Matthew (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257S627000, C257S628000, C438S150000, C438S738000, C438S739000
Reexamination Certificate
active
07494918
ABSTRACT:
Semiconductor structures and methods for fabrication thereof are predicated upon epitaxial growth of an epitaxial surface semiconductor layer upon a semiconductor substrate having a first crystallographic orientation. The semiconductor substrate is exposed within an aperture within a semiconductor-on-insulator structure. The epitaxial surface semiconductor layer alternatively contacts or is isolated from a surface semiconductor layer having a second crystallographic orientation within the semiconductor-on-insulator structure. A recess of the semiconductor surface layer with respect to a buried dielectric layer thereunder and a hard mask layer thereover provides for inhibited second crystallographic phase growth within the epitaxial surface semiconductor layer.
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patent: 2006/0226495 (2006-10-01), Kwon
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Black Linda
Chen Xiaomeng
Holt Judson R.
Kim Byeong Y.
Peidous Igor
Advanced Micro Devices, Inc. (AMD)
Green Phillip
International Business Machines - Corporation
Li, Esq. Todd M.C.
Scully , Scott, Murphy & Presser, P.C.
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