Semiconductor structures including multiple crystallographic...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C257S627000, C257S628000, C438S150000, C438S738000, C438S739000

Reexamination Certificate

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07494918

ABSTRACT:
Semiconductor structures and methods for fabrication thereof are predicated upon epitaxial growth of an epitaxial surface semiconductor layer upon a semiconductor substrate having a first crystallographic orientation. The semiconductor substrate is exposed within an aperture within a semiconductor-on-insulator structure. The epitaxial surface semiconductor layer alternatively contacts or is isolated from a surface semiconductor layer having a second crystallographic orientation within the semiconductor-on-insulator structure. A recess of the semiconductor surface layer with respect to a buried dielectric layer thereunder and a hard mask layer thereover provides for inhibited second crystallographic phase growth within the epitaxial surface semiconductor layer.

REFERENCES:
patent: 6835981 (2004-12-01), Yamada et al.
patent: 6949420 (2005-09-01), Yamashita
patent: 2004/0256700 (2004-12-01), Doris et al.
patent: 2006/0226495 (2006-10-01), Kwon
patent: 2006/0292834 (2006-12-01), Lin et al.

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