Semiconductor structure with stable pre-reacted particle and met

Details Semiconductor structure with stable pre-reacted particle and met Semiconductor structure with stable pre-reacted particle and met

1997-05-27

1999-06-01

Chaudhuri, Olik

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

438158, 438694, 438761, H01L 2131, H01L 21336, H01L 21443

Patent

active

059083212

ABSTRACT:
A method for making a semiconductor structure which may be subject to small particle contaminants (12) includes pre-reacting the small particle (12) with a substrate (10) at a reaction temperature (27, 28). Pre-reacting the particle's (12) greatly reduces the particles' susceptibility to further reaction during subsequent processing, particularly gate dielectric formation. Consequently, the pre-reacted particle (13) as well as the remainder of the structure surface (11) can be covered with a high quality conformal deposited dielectric (14) which maintains a uniform thickness. Potential localized high leakage current density regions are thereby reduced. Additionally, an undesirably thin gate oxide region (70) adjacent a thick field oxide region (66) of a typical MOS structure is eliminated. Yield and reliability are thereby enhanced.

REFERENCES:
patent: 4309240 (1982-01-01), Zaferes
patent: 4735919 (1988-04-01), Faraone
patent: 5024962 (1991-06-01), Murray et al.
patent: 5051380 (1991-09-01), Maeda et al.
patent: 5223443 (1993-06-01), Chinn et al.
patent: 5322807 (1994-06-01), Chen et al.
patent: 5393708 (1995-02-01), Hsia et al.
patent: 5399389 (1995-03-01), Hieber et al.
patent: 5484749 (1996-01-01), Maeda et al.
S. Wolf and R.N. Tauber, Silicon Processing for the VLSI Era, vol. 1-Process Technology, 1986, Lattice Press, pp. 57-58, 208.
B.G. Streetman, Solid State Electronic Devices, 2.sup.nd Ed., 1980, Prentice-Hall, pp. 321-322.

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