Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2008-06-03
2008-06-03
Purvis, Sue A. (Department: 2826)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S296000, C257S343000, C257S262000, C257SE29066
Reexamination Certificate
active
07381603
ABSTRACT:
In one embodiment, a lateral FET cell is formed in a body of semiconductor material. The lateral FET cell includes a super junction structure formed in a drift region between a drain contact and a body region. The super junction structure includes a plurality of spaced apart filled trenches having doped regions of opposite or alternating conductivity types surrounding the trenches.
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Hossain Zia
Tu Shanghui Larry
Jackson Kevin B.
Mandala Jr. Victor A.
Purvis Sue A.
Semiconductor Components Industries L.L.C.
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