Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2008-07-08
2008-07-08
Geyer, Scott B. (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
Reexamination Certificate
active
10892915
ABSTRACT:
A method of forming a silicided gate on a substrate having active regions, comprising the steps of: forming a first silicide in the active regions from a first material; and forming a second silicide in the gate from a second material, wherein the first silicide forms a barrier against the second material forming a silicide in the active regions during the second silicide forming step, wherein said second silicide is thicker than said first silicide.
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Chang Chih-Wei
Lin Cheng-Tung
Shue Shau-Lin
Wang Mei-Yun
Wu Chii-Ming
Duane Morris LLP
Geyer Scott B.
Powers Joseph A.
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