Semiconductor structure including silicide regions and...

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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Reexamination Certificate

active

07396767

ABSTRACT:
A method of forming a silicided gate on a substrate having active regions, comprising the steps of: forming a first silicide in the active regions from a first material; and forming a second silicide in the gate from a second material, wherein the first silicide forms a barrier against the second material forming a silicide in the active regions during the second silicide forming step, wherein said second silicide is thicker than said first silicide.

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