Semiconductor structure including high voltage device

Details Semiconductor structure including high voltage device Semiconductor structure including high voltage device

2011-01-11

2011-01-11

Toledo, Fernando L (Department: 2895)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S298000, C438S186000, C257S344000, C257SE21437, C257SE29269

Reexamination Certificate

active

07867862

ABSTRACT:
A high voltage device includes a substrate with a device region defined thereon. A gate stack is disposed on the substrate in the device region. A channel region is located in the substrate beneath the gate stack, while a first diffusion region is located in the substrate on a first side of the gate stack. A first isolation structure in the substrate, located on the first side of the gate stack, separates the channel and the first diffusion region. The high voltage device also includes a first drift region in the substrate coupling the channel to the first diffusion region, wherein the first drift region comprises a non-uniform depth profile conforming to a profile of the first isolation structure.

REFERENCES:
patent: 2004/0217417 (2004-11-01), Lee
patent: 2009/0072310 (2009-03-01), Koo et al.

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