Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-02-07
2006-02-07
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S507000, C257S615000, C257S616000
Reexamination Certificate
active
06995427
ABSTRACT:
A semiconductor structure having a high-strained crystalline layer with a low crystal defect density and a method for fabricating such a semiconductor structure are disclosed. The structure includes a substrate having a first material comprising germanium or a Group (III)–Group (V)-semiconductor or alloy thereof. In addition, a crystalline epitaxial first layer, comprising a graded buffer layer and a substantially relaxed layer, is provided. The buffer layer is sufficiently relaxed to provide relaxation of the substantially relaxed layer deposited thereon. A further layer may be provided on the first layer, and the transfer of at least the further layer is facilitated by providing a weakened zone in the first layer.
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Aulnette Cécile
Dupont Frederic
Mazure Carlos
Pham Long
S.O.I.Tec Silicon on Insulator Technologies S.A.
Winston & Strawn LLP
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