Semiconductor structure and methods for fabricating same

Details Semiconductor structure and methods for fabricating same Semiconductor structure and methods for fabricating same

2005-10-18

2005-10-18

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Total dielectric isolation

C438S118000, C438S455000, C438S459000, C438S692000, C438S959000, C438S977000, C438S981000

Reexamination Certificate

active

06955971

ABSTRACT:
A semiconductor structure and methods for fabricating are disclosed. In an implementation, a method of fabricating a semiconductor structure includes forming a first semiconductor material substrate with a first dielectric area having a first thickness and a second dielectric area having a second thickness, bonding the first substrate to a second semiconductor substrate, and thinning at least one of the first and second substrates. The invention also pertains to a semiconductor structure. The structure includes a semiconductor substrate having a surface layer of semiconductor material, a first dielectric layer of a first dielectric material buried under the surface layer, and a second dielectric layer buried under the surface layer. In an embodiment, the thickness of the first dielectric layer is different than the thickness of the second dielectric layer.

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