Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-09-30
2011-11-29
Pham, Thanh V (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE29255, C257SE21267, C438S775000, C438S266000, C438S264000
Reexamination Certificate
active
08067809
ABSTRACT:
A semiconductor storage device with excellent electrical characteristics (write/erase characteristics) by favorable nitrogen concentration profile of a gate insulating film, and a method for manufacturing the semiconductor device. The semiconductor device fabricating method operates by transferring charges through a gate insulating film formed between a semiconductor substrate and a gate electrode, including introducing an oxynitriding species previously diluted by plasma excitation gas into a plasma processing apparatus, generating an oxynitriding species by a plasma, and forming an oxynitride film on the semiconductor substrate as the gate insulating film. The oxynitriding species contains NO gas at a ratio of 0.00001 to 0.01% to the total volume of gas introduced into the plasma processing apparatus.
REFERENCES:
patent: 5464792 (1995-11-01), Tseng et al.
patent: 5620910 (1997-04-01), Teramoto
patent: 5661056 (1997-08-01), Takeuchi
patent: 6265327 (2001-07-01), Kobayashi et al.
patent: 6716705 (2004-04-01), Mehta et al.
patent: 6797650 (2004-09-01), Wang et al.
patent: 2003/0060058 (2003-03-01), Roy et al.
patent: 2003/0170945 (2003-09-01), Igeta et al.
patent: 2004/0164344 (2004-08-01), Weimer
patent: 2004/0232516 (2004-11-01), Yoneda
patent: 2005/0153570 (2005-07-01), Matsuyama et al.
patent: 6 268234 (1994-09-01), None
patent: 2003 60198 (2003-02-01), None
patent: 2004 214620 (2004-07-01), None
patent: WO 03/030243 (2003-04-01), None
patent: 2004 070816 (2004-08-01), None
H.G. Pomp et al., “lightly N2O nitrided dielectrics . . . ”, Tech. Dig. IEDM, 1993, p. 463.
S. Wolf, “silicon processing for the VLSI Era” vol. 4, p. 120.
Jonghan Kim, et al., “Scaling Down of Tunnel Oxynitride in Nand Flash Memory: Oxynitride Selection and Reliabilities”, Reliability Physics Symposium, 35THAnnual Proceedings, IEEE International, pp. 12-16, 1997.
David C. T., et al., “Enhanced Reliability for Gate Dielectric of Low-Temperature Polysilicon Thin-Film Transistors by No-Plasma Nitridation”, Proceedings, 2002 IEEE Hong Kong Electron Devices Meeting, pp. 35-38, 2002.
S. Maikap, et al., “NO/O2/NO plasma-grown oxynitride films on strained-Si1-xGex”, Electronics Letters, Jul. 8, 1999, vol. 35, No. 14, pp. 1202-1203.
David C. T. Or, et al., “Enhanced reliability for low-temperature gate dielectric of MOS devices by N2O or NO Plasma nitridation”, Microelectronics Reliability, 43, 2003, pp. 163-166.
Office Action issued Sep. 29, 2010 in EP Application No. 05 787 588.2.
Kitagawa Junichi
Ohmi Tadahiro
Ozaki Shigenori
Teramoto Akinobu
Laurenzi Mark A
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Pham Thanh V
Tohoku University
Tokyo Electron Limited
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