Semiconductor storage device having word-line voltage booster ci

Details Semiconductor storage device having word-line voltage booster ci Semiconductor storage device having word-line voltage booster ci

1993-09-08

1995-06-27

Popek, Joseph A.

Static information storage and retrieval

Read/write circuit

Precharge

365204, 36523006, G11C 700

Patent

active

054285771

ABSTRACT:
A semiconductor storage device having a word-line voltage booster circuit includes: a plurality of word-lines connected to each memory cell array; a drive signal generation circuit for producing a word-line drive signal having a voltage higher than a power supply voltage; a decoder circuit for transmitting the word-line drive signal produced by the drive signal generation circuit, when the drive signal generation circuit is selected by an address signal; and a charging circuit connected to a signal path which transmits the word-line drive signal from the drive signal generation circuit to the decoder circuit. The charging circuit charges the signal path before the word-line drive signal is output to the signal path.

REFERENCES:
patent: 4958326 (1990-09-01), Sakurai
patent: 5034919 (1991-06-01), Sasai et al.
patent: 5274597 (1993-12-01), Ohbayashi et al.

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