Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2010-12-03
2011-12-06
Hoang, Quoc (Department: 2892)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C257SE21659
Reexamination Certificate
active
08071449
ABSTRACT:
A semiconductor storage device has a plurality of word lines formed with a predetermined interval on a semiconductor substrate, a selection transistor provided at an end portion of the plurality of word lines, a first insulating film formed so as to cover side surfaces of the word lines, a side surface of the selection transistor, and a surface of the semiconductor substrate between the word lines, a high-permittivity film formed on the first insulation film, a second insulating film formed so as to cover the upper surface of the word lines and the selection transistor, a first air-gap portion located between the word lines and surrounded by the high-permittivity film and the second insulating film, and a second air-gap portion formed via the first insulating film and the high-permittivity film at a sidewall portion, which opposes the selection transistor, of the word line adjacent to the selection transistor, an upper portion of the second air-gap portion being covered by the second insulating film.
REFERENCES:
patent: 6353242 (2002-03-01), Watanabe et al.
patent: 7045849 (2006-05-01), Chen et al.
patent: 7705392 (2010-04-01), Yonemochi et al.
patent: 2004/0232496 (2004-11-01), Chen et al.
patent: 2006/0001073 (2006-01-01), Chen et al.
patent: 2006/0194390 (2006-08-01), Imai et al.
patent: 2006/0231884 (2006-10-01), Yonemochi et al.
patent: 2007/0063256 (2007-03-01), Imai et al.
patent: 2007/0096202 (2007-05-01), Kang et al.
patent: 2007/0184615 (2007-08-01), Brazzelli et al.
patent: 2008/0003724 (2008-01-01), Cho et al.
patent: 01137651 (1989-05-01), None
patent: 2002-110930 (2002-04-01), None
patent: 2003-209247 (2003-07-01), None
patent: 2007-150068 (2007-06-01), None
patent: 2008-47630 (2008-02-01), None
Kang et al.; “The Air Spacer Technology for Improving the Cell Distribution in 1 Giga Bit NAND Flash Memory”; IEEE, pp. 36-37, (2006).
Notification of Reasons for Rejection issued by the Japanese Patent Office on Jul. 16, 2010, for Japanese Patent Application No. 2008-052185, and English-language translation thereof.
Aoyama Kenji
Meguro Hisataka
Nagashima Satoshi
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Hoang Quoc
Kabushiki Kaisha Toshiba
LandOfFree
Semiconductor storage device and method for manufacturing... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor storage device and method for manufacturing..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor storage device and method for manufacturing... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4302901