Semiconductor storage device

Details Semiconductor storage device Semiconductor storage device

2011-06-21

2011-06-21

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Read/write circuit

Precharge

C365S226000

Reexamination Certificate

active

07965569

ABSTRACT:
A voltage of a bit line connected to a memory cell is stepped up up to a power supply voltage by a precharge circuit. Before data is read from the memory cell, the voltage of the bit line is stepped down to a voltage level lower than the power supply voltage by a step-down circuit. A precharge switching element controls a connection between a high-potential-side power supply and the precharge circuit and a connection between a low-potential-side power supply and the precharge circuit. A power supply connecting circuit is provided between the precharge switching element and the high-potential-side power supply. A ground connecting circuit is provided between a connecting point at which the precharge switching element is connected to the power supply connecting circuit and the low-potential-side power supply.

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Khellah, Muhammad et al. “Wordling & Bitline Pulsing Schemes for Improving SRAM Cell Stability in Low-Vcc 65mn CMOS Designs,” 2006 Symposium on VLSI Circuits Digest of Technical Papers.

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