Static information storage and retrieval – Read/write circuit – Precharge
Reexamination Certificate
2008-11-07
2010-10-19
Ho, Hoai V (Department: 2827)
Static information storage and retrieval
Read/write circuit
Precharge
C365S189011
Reexamination Certificate
active
07817486
ABSTRACT:
A bit line potential monitor circuit is provided in a bit line, and a step-down circuit of the bit line is controlled base on information from the monitor circuit. As a result, the bit line is easily stepped down to an optimal potential level in accordance with a potential and a load capacity thereof without being affected by variability in devices or operation conditions.
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Khellah, Muhammad et al., “Wordline & Bitline Pulsing Schemes for Improving SRAM Cell Stability in Low-Vcc 65nm CMOS Designs,” 2006 Symposium on VLSI Circuits Digest of Technical Papers.
Ho Hoai V
McDermott Will & Emery LLP
Norman James G
Panasonic Corporation
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