Semiconductor storage device

Static information storage and retrieval – Read/write circuit – Differential sensing

Reexamination Certificate

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Details

C365S203000, C365S207000

Reexamination Certificate

active

07489576

ABSTRACT:
A semiconductor storage device has first and second cell arrays including a plurality of memory cells to store data, a sense amplifier selectively connected with either one of the first and second cell arrays, a first precharge circuit to set a pair of bit lines in the first cell array to a predetermined voltage, a second precharge circuit to set a pair of bit lines in the second cell array to a predetermined voltage, a first switch circuit to connect the sense amplifier with the first cell array, a second switch circuit to connect the sense amplifier with the second cell array, and a switch controller to control conductive state of the first and second switch circuits. In non-selection state where the sense amplifier does not access any of the cell arrays, the switch controller controls one of the switch circuits into conducting state.

REFERENCES:
patent: 6049493 (2000-04-01), Kitamoto et al.
patent: 6341088 (2002-01-01), Sakamoto et al.
patent: 7106641 (2006-09-01), Tsukada
patent: 2004/0145959 (2004-07-01), Kuge et al.
patent: 2005/0195669 (2005-09-01), Sim
patent: 2007/0159900 (2007-07-01), Aoki
patent: 2005-243158 (2005-09-01), None

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