Semiconductor storage and its refreshing method

Details Semiconductor storage and its refreshing method Semiconductor storage and its refreshing method

2005-09-13

2005-09-13

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Read/write circuit

Data refresh

C365S230030, C365S230060

Reexamination Certificate

active

06944081

ABSTRACT:
A semiconductor memory device capable of a further reduction in power consumption for refresh operation is provided. Cell arrays S0, S1are divided into respective four blocks B0˜B3and B10˜B13. In a normal read/write operation, by address data designating a word line, one of the cell arrays is selected, and also one block is selected in the selected cell array, and further one word line is selected in the selected block. In a refresh operation, one of the cell arrays is selected, and four blocks in the selected cell array are simultaneously refreshed. Namely, respective one word line is selected from each of the four blocks, and the selected word lines are refreshed, thereby to reduce a power comsumption as compared to when the plural cell arrays are refreshed.

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