Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Physical stress responsive
Patent
1995-08-17
1997-04-22
Powell, William
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Physical stress responsive
216 79, 438585, 438739, H01L 2100, B44C 122
Patent
active
056226330
ABSTRACT:
An MISFET type semiconductor sensor, which can avoid deterioration of characteristics, and a method for fabricating same are disclosed. Silicon oxide films and a silicon nitride film are formed on an upper surface of a p-type silicon substrate, and a movable portion is disposed above the silicon nitride film with a predetermined interval interposed therebetween. A movable gate electrode portion exists on a portion of the movable portion and is displaced by acceleration. Fixed electrodes (a source/drain portion) composed of an impurity diffusion layer are formed on the p-type silicon substrate, and a flowing current changes due to a change in a relative position with the movable gate electrode portion due to acceleration. Projections for movable-range restriction use are provided on a lower surface of the movable portion other than the movable gate electrode portion, and form a gap which is narrower than a gap between the p-type silicon substrate and movable gate electrode portion.
REFERENCES:
patent: 4948757 (1990-08-01), Jain et al.
patent: 5326726 (1994-07-01), Tsang et al.
patent: 5345824 (1994-09-01), Sherman et al.
patent: 5470797 (1995-11-01), Mastrangelo
Hattori Tadashi
Ohtsuka Yoshinori
Takeuchi Yukihiro
Nippondenso Co. Ltd.
Powell William
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