Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Physical deformation
Patent
1991-10-02
1993-07-27
James, Andrew J.
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Physical deformation
257364, 257489, 257537, 73727, H01L 2984, H01L 2996
Patent
active
052313018
ABSTRACT:
An electromechanical sensor is provided which comprises an n-type semiconductor region which defines a flexible member surrounded by a thicker base portion; at least one piezoresistor formed in the semiconductor region; an n+ region formed in the thicker base portion; a first insulative layer which overlays the piezoresistor and which extends at least from the piezoresistor to the first n+ doped region; a guard layer which overlays at least a portion of the first insulative layer such that the guard layer overlays the piezoresistor and extends at least from the piezoresistor to a point adjacent to the n+ region; and a first bias contact which electrically interconnects the n+ region and the guard layer.
REFERENCES:
patent: 4057822 (1977-11-01), Watanabe
patent: 4270137 (1981-05-01), Coe
patent: 4480488 (1984-11-01), Read et al.
patent: 4580156 (1986-04-01), Comizzoli
patent: 4618397 (1986-10-01), Shimizu et al.
patent: 4622856 (1986-11-01), Binder et al.
patent: 4737473 (1988-04-01), Wilner
patent: 4838088 (1989-06-01), Murakami
Christel Lee A.
Peterson Kurt E.
Crane Sara W.
James Andrew J.
Lucas Novasensor
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