Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Physical deformation
Patent
1991-12-20
1994-02-01
James, Andrew J.
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Physical deformation
257254, 257414, 257415, 257417, 257418, H01L 2966, H01L 2996, H01L 2984
Patent
active
052834590
ABSTRACT:
A semiconductor sensor with a compact structure is provided, which comprises a semiconductor substrate, a semiconductor diaphragm integrally formed with the semiconductor substrate, and a penetrating aperture formed in the semiconductor substrate so as to surround desired sides of the diaphragm. The aperture has first and second funnel-shaped aperatures whose intersecting conic sections open toward opposite directions. A cavity for defining the diaphragm is provided when the semiconductor substrate is subjected to electrolytic etching to form the second funnel-shaped aperture therein.
REFERENCES:
patent: 3888703 (1975-06-01), Wise et al.
patent: 4908693 (1990-03-01), Nishiguchi
patent: 4975390 (1990-12-01), Fujii et al.
patent: 5006487 (1991-04-01), Stokes
IBM Technical Disclosure Bulletin, vol. 25, No. 10, dated Mar. 1983, pp. 5041-5042 by J. L. Speidell.
Hirano Hirokazu
Yamaki Bunshiro
James Andrew J.
Jr. Carl Whitehead
Kabushiki Kaisha Toshiba
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