Semiconductor regeneration/precharge device

Static information storage and retrieval – Read/write circuit – Precharge

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365205, 365222, G11C 700

Patent

active

044751788

ABSTRACT:
A semiconductor device includes: a pair of first and second data lines charged to a predetermined potential during a precharge period; a sense amplifier for sensing the potential of the pair of data lines during an active period; and a regeneration circuit which charges the first and second data lines to the predetermined potential and maintain the potential of the higher potential data line after the sense amplifier senses during the active period.

REFERENCES:
patent: 3514765 (1970-05-01), Christensen
patent: 3679472 (1972-07-01), Wahlstrom
patent: 4028557 (1977-06-01), Wilson
patent: 4070590 (1978-01-01), Ieda et al.
Ellis et al., "Controlled Gate Bit Line Boost Circuit", IBM Tech. Disc. Bul., vol. 24, No. 7B, 12/1981, pp. 3820-3822.

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