Static information storage and retrieval – Read/write circuit – Precharge
Reexamination Certificate
2006-04-11
2006-04-11
Nguyen, Tuan T. (Department: 2824)
Static information storage and retrieval
Read/write circuit
Precharge
C365S207000, C365S189090
Reexamination Certificate
active
07027341
ABSTRACT:
A semiconductor readout circuit includes a precharge circuit which charges a bit line connected to a memory cell to its predetermined precharge voltage before reading out information stored in the memory cell, a feedback-type bias circuit which controls a voltage of the bit line to its predetermined voltage, a sense amplifier which detects and amplifies a change in a voltage of a readout input node connected to the bit line via a transfer gate of the feedback-type bias circuit, and a load circuit which charges the readout input node. The load circuit is made inactive at least for a fixed period immediately before ending of a precharge period when the precharge circuit is active, and is made active after ending of the precharge period.
REFERENCES:
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patent: 6191979 (2001-02-01), Uekubo
patent: 6353560 (2002-03-01), Morikawa
patent: 6944077 (2005-09-01), Morikawa
patent: 1049102 (2000-11-01), None
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European Search Report mailed Sep. 27, 2005 for European Patent Application No. 04 25 8043, 3 pages.
Morrison & Foerster / LLP
Nguyen Tuan T.
Sharp Kabushiki Kaisha
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