Static information storage and retrieval – Read/write circuit – Differential sensing
Patent
1998-06-24
2000-05-30
Nelms, David
Static information storage and retrieval
Read/write circuit
Differential sensing
36518907, 36523006, G11C 702
Patent
active
060698314
ABSTRACT:
A semiconductor read-only memory includes a main memory cell array having a plurality of first and second bit lines arranged in a hierarchical configuration. A dummy cell array generates a reference potential during a read-out operation. A decoder circuit generates a first, second, third and fourth selection signals from address signals, and a sense amplifier circuit detects data stored in a memory cell of the main memory cell array. A switching circuit connects the dummy cell to the sense amplifier circuit through the second bit line. The read-only memory according to the invention has an advantage that it is possible to accomplish an efficient read-out operation without additional dummy bit lines in an area of the memory cell array.
REFERENCES:
patent: 5148063 (1992-09-01), Hotta
patent: 5268861 (1993-12-01), Hotta
patent: 5349563 (1994-09-01), Iwase
patent: 5383160 (1995-01-01), Furuyama
patent: 5469397 (1995-11-01), Hoshino et al.
patent: 5502681 (1996-03-01), Park
patent: 5659503 (1997-08-01), Sudo et al.
patent: 5694369 (1997-12-01), Abe
patent: 5886937 (1999-03-01), Jang
Choi Byeng-Soon
Jang Cheol-Ung
Nelms David
Nguyen Hien
Samsung Electronics Co,. Ltd.
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