Semiconductor read-only memory device

Details Semiconductor read-only memory device Semiconductor read-only memory device

1983-11-30

1987-01-27

Fears, Terrell W.

Static information storage and retrieval

Systems using particular element

Semiconductive

357 2312, 365189, 365 51, G11C 1140

Patent

active

046398929

ABSTRACT:
A semiconductor read-only memory device includes first and second MOS field effect mode transistors (MOSFET) as memory elements storing either one of binary values of binary information. The first MOSFET has such a relatively long effective gate length that it becomes conductive upon receipt of a first relatively high gate voltage applied thereto as a memory selection signal and becomes non-conductive upon receipt of a second relatively low gate voltage. The second MOSFET, on the other hand, has such a relatively short effective gate length that it becomes conductive whether the first or second gate voltage is applied thereto.

REFERENCES:
patent: 4272830 (1981-06-01), Moench
patent: 4322823 (1982-03-01), Pricer et al.
patent: 4395725 (1983-07-01), Parekh
patent: 4410904 (1983-10-01), Wollesen
patent: 4480320 (1984-10-01), Naiff
patent: 4500975 (1985-02-01), Shirato
IBM Technical Disclosure Bulletin, "Variation in Threshold Voltage Using Reduced Source-Drain Spacing" by R. H. Dennard, vol. 12, No. 9, Feb. 1970, p. 1391.
Fabrication of High-Performance LDDFET's with Oxide Sidewall-Spacer Technology, Tsang et al, IEEE Transactions, vol. ED-29, No. 4, 1982, pp. 590-596.

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