Method for forming shallow trench isolation structure

Details Method for forming shallow trench isolation structure Method for forming shallow trench isolation structure

1999-02-01

1999-12-14

Fahmy, Wael

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

438424, 438426, 438437, 438444, 438445, 438447, H01L 2176

Patent

active

060017074

ABSTRACT:
A method for forming a shallow trench isolation structure in a substrate includes the steps of forming a doped region around the future top corner regions of a trench. The concentration of dopants inside the doped region increases towards the substrate surface. Thereafter, a trench is formed in the substrate, and then a thermal oxidation operation is carried out. Utilizing the higher oxidizing rate for doped substrate relative to an undoped region, the upper corners of the trench become rounded corners. Subsequently, a liner oxide layer is formed over the substrate surface inside the trench using conventional methods. Finally, insulating material is deposited into the trench to form a trench isolation structure.

REFERENCES:
patent: 4534824 (1985-08-01), Chen
patent: 5447883 (1995-09-01), Koyama
patent: 5780353 (1998-07-01), Omid-Zohoor
patent: 5904538 (1999-05-01), Son et al.

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