Semiconductor processing using energized hydrogen gas and in...

Details Semiconductor processing using energized hydrogen gas and in... Semiconductor processing using energized hydrogen gas and in...

2004-08-26

2009-12-15

Ghyka, Alexander G (Department: 2812)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S637000, C438S725000, C438S745000, C257SE21255, C257SE21579

Reexamination Certificate

active

07632756

ABSTRACT:
A method of fabricating a semiconductor device. The method comprises subjecting a substrate having formed thereon photoresist layer to a plasma hydrogen, the substrate further having formed thereon a sacrificial layer; contacting the photoresist layer with a photoresist removal solution; subjecting the sacrificial layer to a plasma hydrogen; and contacting the sacrificial material layer with an etchant solution.

REFERENCES:
patent: 5811358 (1998-09-01), Tseng et al.
patent: 6194319 (2001-02-01), Carstensen
patent: 6268457 (2001-07-01), Kennedy et al.
patent: 6413877 (2002-07-01), Annapragada
patent: 6440647 (2002-08-01), Yakobson
patent: 6448185 (2002-09-01), Andideh et al.
patent: 6696228 (2004-02-01), Muraoka et al.
patent: 6699330 (2004-03-01), Muraoka
patent: 7122484 (2006-10-01), Perng et al.
patent: 2002/0011257 (2002-01-01), Degendt et al.
patent: 2004/0157444 (2004-08-01), Chiu et al.
PCT International Search Report for PCT Application PCT/US2005/025822, 12 pgs, Mailed May 24, 2006.
PCT International Preliminary Report on Patentability (IPRP Chapter I), Mailed Apr. 25, 2007, 8 pages.

Affiliated with

Also associated with

Rating

Semiconductor processing using energized hydrogen gas and in... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor processing using energized hydrogen gas and in..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor processing using energized hydrogen gas and in... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4103110