Semiconductor processing using energized hydrogen gas and in...

Details Semiconductor processing using energized hydrogen gas and in... Semiconductor processing using energized hydrogen gas and in...

2006-10-16

2008-10-14

Ghyka, Alexander G (Department: 2812)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S637000, C257SE21255, C257SE21579

Reexamination Certificate

active

07435686

ABSTRACT:
A method of fabricating a semiconductor device. The method comprises subjecting a substrate having formed thereon photoresist layer to a plasma hydrogen, the substrate further having formed thereon a sacrificial layer; contacting the photoresist layer with a photoresist removal solution; subjecting the sacrificial layer to a plasma hydrogen; and contacting the sacrificial material layer with an etchant solution.

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PCT International Search Report and Written Opinion for PCT Application No. PCT/US2005/025822, mailed May 24, 2006 (12 pages).

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