Semiconductor processing methods of forming field oxidation regi

Details Semiconductor processing methods of forming field oxidation regi Semiconductor processing methods of forming field oxidation regi

1997-05-23

1998-03-10

Trinh, Michael

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Recessed oxide by localized oxidation

438443, H01L 2176

Patent

active

057260923

ABSTRACT:
A semiconductor processing method of forming a pair of adjacent field oxide regions includes, i) providing a sacrificial pad oxide layer to a thickness of from 20 Angstroms to 100 Angstroms; ii) providing a patterned masking layer over the sacrificial pad oxide layer and over a desired active area region, the layer having a thickness of from 500 Angstroms to 3000 Angstroms and comprising a pair of adjacent masking blocks having a minimum pitch of from 0.5 micron to 0.7 micron; iii) oxidizing portions of the substrate unmasked by the masking layer in an O.sub.2 ambient at a pressure of at least 15 atmospheres to form at least one pair of adjacent field oxide regions, the ambient being substantially void of H.sub.2 O during the oxidizing, the formed field oxide regions having a location of maximum thickness of from 1500 Angstroms to 3000 Angstroms; iv) stripping the masking layer from the substrate; v) providing a gate oxide layer over the active area between the pair of field oxide regions; and vi) etching portions of the field oxide regions prior to providing the gate oxide, such etching resulting in removal of a total of from 250 to 1000 Angstroms of oxide from the field oxide regions prior to provision of the gate oxide, such etching resulting in a maximum width of the respective field oxide regions of from 0.20 to 0.40 micron and a minimum pitch of the adjacent pair of field oxide regions of from 0.5 to 0.7 micron.

REFERENCES:
patent: 4554726 (1985-11-01), Hillenius et al.
patent: 4987093 (1991-01-01), Teng et al.
patent: 5061654 (1991-10-01), Shimizu et al.
patent: 5134089 (1992-07-01), Barden et al.
patent: 5234859 (1993-08-01), Mametani et al.
patent: 5358894 (1994-10-01), Fazan et al.
patent: 5374586 (1994-12-01), Huang et al.
patent: 5393694 (1995-02-01), Mathews
patent: 5472904 (1995-12-01), Figura et al.
patent: 5543343 (1996-08-01), Bryant et al.
Bryant, Andres, et al., "Characteristics of CMOS Device Isolation for the VLSI Age", IEDM Technical Digest, IEEE, pp. 671-674 (1994).
Chatterjee et al, "A Shallow Trench Isolation Study for 0.25/0.18 micron CMOS Technologies and Beyond"; 1996 Symposium on VLSI Tech. Dig. of Technical papers, p. 156.

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