Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-05-03
2011-05-03
Garber, Charles D (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S695000, C438S701000, C438S702000, C438S706000, C438S719000, C257SE21549, C257SE21555
Reexamination Certificate
active
07935602
ABSTRACT:
The invention includes methods of forming isolation regions. An opening can be formed to extend into a semiconductor material, and an upper periphery of the opening can be protected with a liner while a lower periphery is unlined. The unlined portion can then be etched to form a widened region of the opening. Subsequently, the opening can be filled with insulative material to form an isolation region. Transistor devices can then be formed on opposing sides of the isolation region, and electrically isolated from one another with the isolation region. The invention also includes semiconductor constructions containing an electrically insulative isolation structure extending into a semiconductor material, with the structure having a bulbous bottom region and a stem region extending upwardly from the bottom region to a surface of the semiconductor material.
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“S-RCAT (Sphere-shaped-Recess-Channel-Array-Transistor) Technology for 70nm DRAM feature size and beyond”; J.Y. Kim et al; 2005 Symposium on VLSI Technology Digest of Technical Papers; pp. 34-35.
US2006/020877, May 2006, PCT Search Report.
Allen T. Earl
Fishburn Fred D.
Fucsko Janos
Hanson Robert J.
Lane Richard H.
Garber Charles D
Micro)n Technology, Inc.
Pompey Ron Everett
Wells St. John P.S.
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