Semiconductor processing method of providing a doped polysilicon

Details Semiconductor processing method of providing a doped polysilicon Semiconductor processing method of providing a doped polysilicon

1998-12-08

2000-12-12

Whitehead, Jr., Carl

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

438482, 438398, 438255, H01L 2120, H01L 2136

Patent

active

061598283

ABSTRACT:
A semiconductor processing method of providing a doped polysilicon layer atop a substrate includes, a) depositing a layer of substantially amorphous silicon having a dopant concentration of less than or equal to about 1.times.10.sup.16 atoms/cm.sup.3 over a substrate to a thickness of less than or equal to about 30 Angstroms; b) depositing a layer of silicon over the amorphous silicon layer in a manner which in situ dopes such layer to a dopant concentration of greater than about 1.times.10.sup.16 atoms/cm.sup.3 ; and c) providing the deposited silicon layers to be polycrystalline. Preferably, the substantially amorphous layer is entirely undoped as-deposited. The invention is believed to have greatest applicability to provision of thin film doped polysilicon layers having thicknesses of less than or equal to about 100 Angstroms. Accordingly, the combined thickness of the deposited silicon layers is preferably less than or equal to about 100 Angstroms. The preferred method for providing the deposited silicon layers to be polycrystalline is by rapid thermal processing. Such, or other processing, also effectively dopes the first deposited silicon layer by out-diffusion from the second deposited layer.

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