Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Multiple layers
Patent
1995-12-04
1999-07-20
Bowers, Charles
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Multiple layers
438791, 438948, 4302721, H01L 21318
Patent
active
059267399
ABSTRACT:
A semiconductor processing method of promoting adhesion of photoresist to an outer substrate layer predominately comprising silicon nitride includes, a) providing a substrate; b) providing an outer layer of Si.sub.3 N.sub.4 outwardly of the substrate, the outer Si.sub.3 N.sub.4 layer having an outer surface; c) covering the outer Si.sub.3 N.sub.4 surface with a discrete photoresist adhesion layer; and d) depositing a layer of photoresist over the outer Si.sub.3 N.sub.4 surface having the intermediate discrete adhesion layer thereover, the photoresist adhering to the Si.sub.3 N.sub.4 layer with a greater degree of adhesion than would otherwise occur if the intermediate discrete adhesion layer were not present. Further, a method in accordance with the invention includes, i) providing an outer layer of Si.sub.3 N.sub.4 outwardly of the substrate, the outer Si.sub.3 N.sub.4 layer having an outer surface; ii) transforming the outer Si.sub.3 N.sub.4 surface into a material effective to promote adhesion of photoresist to the Si.sub.3 N.sub.4 layer; and iii) depositing a layer of photoresist over the transformed outer Si.sub.3 N.sub.4 surface, the photoresist adhering to the Si.sub.3 N.sub.4 layer with a greater degree of adhesion than would otherwise occur if the outer Si.sub.3 N.sub.4 surface were not transformed.
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Martin Annette L.
Niroomand Ardavan
Rolfson J. Brett
Bowers Charles
Micro)n Technology, Inc.
Whipple Matthew
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