Semiconductor processing method of forming field oxide regions o

Details Semiconductor processing method of forming field oxide regions o Semiconductor processing method of forming field oxide regions o

1995-08-01

1997-05-13

Trinh, Michael

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Recessed oxide by localized oxidation

438448, 438696, H01L 2176

Patent

active

056292309

ABSTRACT:
A semiconductor processing method of forming a field oxide region on a semiconductor substrate includes, a) providing a patterned first masking layer over a desired active area region of a semiconductor substrate, the first masking layer having at least one side edge; b) providing a silicon sidewall spacer over the side edge of the patterned first masking layer, the silicon sidewall spacer having a laterally outward projecting foot portion; c) oxidizing the substrate and the silicon sidewall spacer to form a field oxide region on the substrate; d) stripping the first masking layer from the substrate; and e) providing a gate oxide layer over the substrate. The invention enables taking advantage of process techniques which minimize the size of field oxide bird's beaks without sacrificing upper field oxide topography.

REFERENCES:
patent: 4927780 (1990-05-01), Roth et al.
patent: 5326715 (1994-07-01), Jang et al.
patent: 5360753 (1994-11-01), Park et al.
patent: 5374584 (1994-12-01), Lee et al.
patent: 5387538 (1995-02-01), Moslehi
patent: 5393692 (1995-02-01), Wu
patent: 5432118 (1995-07-01), Orlowski et al.
Park et al "A Novel Locos Type Isolation Technology Free of the Field Oxide Thinning Effect", Solid State Devices and Materials, pp. 528-530, 1993.

Affiliated with

Also associated with

Rating

Semiconductor processing method of forming field oxide regions o does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor processing method of forming field oxide regions o, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor processing method of forming field oxide regions o will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1384902