Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Patent
1997-08-18
2000-05-23
Quach, T. N.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
438297, 438453, H01L 21336
Patent
active
060665491
ABSTRACT:
A semiconductor processing method of forming a conductive gate line includes forming a field oxide mask over a portion of a semiconductor substrate. Field oxide regions are formed adjacent the field oxide mask. A portion of the field oxide mask is removed to form a buried contact mask. The buried contact mask defines an underlying masked buried contact area. The buried contact area is then unmasked. A conductive gate line is then formed over and in electrical communication with the unmasked buried contact area. A semiconductor processing method of making ohmic contact between a transistor gate line and a substrate diffusion region includes providing a gate dielectric layer over a substrate on exposed active area while a buried contact mask is in place. The buried contact was formed from a patterned portion of a field oxide mask.
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Ghandhi, S.K., "VLSI Fabrication Principles," John Wiley & Sons, 1983, pp. 576-582.
Micro)n Technology, Inc.
Quach T. N.
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