Method of improving selectivity between silicon nitride and sili

Details Method of improving selectivity between silicon nitride and sili Method of improving selectivity between silicon nitride and sili

1998-10-14

2000-05-23

Elms, Richard

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

438623, 438778, H01L 213205, H01L 214763

Patent

active

060665505

ABSTRACT:
A method of improving selectivity between silicon nitride and silicon oxide. A pad oxide is formed on a substrate. Using low pressure chemical vapor deposition or plasma enhanced chemical vapor deposition, a silicon nitride layer is formed on the silicon oxide layer. The silicon nitride is implanted by boron ions to transform into boron nitride. A conventional method is performed to form a shallow trench isolation.

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patent: 5021355 (1991-06-01), Dhong et al.
patent: 5075130 (1991-12-01), Reeber et al.
patent: 5151378 (1992-09-01), Ramde
patent: 5233215 (1993-08-01), Baliga
patent: 5641694 (1997-06-01), Kenney
patent: 5959330 (1999-09-01), Tokuyama et al.

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