Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1998-05-29
2000-05-02
Quach, T. N.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438299, 438586, 438597, 438657, 438564, H01L 21335
Patent
active
060571985
ABSTRACT:
A semiconductor processing method of forming a buried contact to a substrate region includes, a) providing a stress relief layer over a bulk semiconductor substrate; b) etching the stress relief layer to expose a desired buried contact area of the substrate; c) masking over the stress relief layer and over the desired buried contact area; d) with the masking in place, exposing the substrate to oxidation conditions effective to grow field oxide regions in unmasked areas of the substrate; e) after forming the field oxide regions, removing the masking from the substrate and effectively leaving the buried contact area exposed; f) providing a layer of electrically conductive material over field oxide and exposed buried contact area; and g) patterning the conductive material layer into a conductive line which overlies both field oxide and the buried contact area.
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Micro)n Technology, Inc.
Quach T. N.
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