Semiconductor processing method and system using C.sub.5 F.sub.8

Details Semiconductor processing method and system using C.sub.5 F.sub.8 Semiconductor processing method and system using C.sub.5 F.sub.8

1998-06-01

2000-12-12

Hiteshen, Felisa

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438714, H01L 2130

Patent

active

061598623

ABSTRACT:
A method and system for processing a substrate in the presence of high purity C.sub.5 F.sub.8. When processing oxides and dielectrics in a gas plasma processing system, C.sub.5 F.sub.8 is used in combination with a carrier gas (e.g., Ar) and one or more of CO and O.sub.2. When using a silicon nitride (Si.sub.x N.sub.y) layer as an etch stop, effective etching is performed due to the selectivity of oxides versus silicon nitride. The method is used when etching down to self-aligning contacts and other layers. The method may be practiced with or without using an anti-reflective coating underneath the photoresist layer.

REFERENCES:
patent: 5338399 (1994-08-01), Yanagda

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