Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – By reaction with substrate
Reexamination Certificate
2011-04-19
2011-04-19
Menz, Laura M (Department: 2813)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
By reaction with substrate
C438S787000, C438S778000
Reexamination Certificate
active
07928019
ABSTRACT:
Embodiments of the present disclosure include semiconductor processing methods and systems. One method includes forming a material layer on a semiconductor substrate by exposing a deposition surface of the substrate to at least a first and a second reactant sequentially introduced into a reaction chamber having an associated process temperature. The method includes removing residual first reactant from the chamber after introduction of the first reactant, removing residual second reactant from the chamber after introduction of the second reactant, and establishing a temperature differential substantially between an edge of the substrate and a center of the substrate via a purge process.
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Brooks Cameron & Huebsch PLLC
Menz Laura M
Micro)n Technology, Inc.
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