Semiconductor processing

Details Semiconductor processing Semiconductor processing

1994-04-29

1995-08-01

Breneman, R. Bruce

Etching a substrate: processes

Masking of a substrate using material resistant to an etchant

Mask resist contains inorganic material

216 47, 216 67, 216 79, H01L 2100

Patent

active

054377650

ABSTRACT:
A dry etch process for stripping LOCOS nitride masks (302) with fluorine based removal of oxynitride (312) followed by fluorine plus chlorine based removal of nitride (302) and any silicon buffer layer (303) without removal of pad oxide (304).

REFERENCES:
patent: 4374698 (1983-02-01), Sanders et al.
patent: 4631219 (1986-12-01), Geipel et al.
patent: 4855017 (1989-08-01), Douglas
patent: 4950618 (1990-08-01), Sundaresan et al.
patent: 5188704 (1993-02-01), Bafie et al.
"Chemical Etching of Thermally Oxidized Silicon Nitride: Comparison of Wet and Dry Etching Methods"; J. Electrochem. Soc. (1991), 138 (5), Loewenstein et al.; abstract only.

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