Semiconductor probe with resistive tip having metal shield...

Details Semiconductor probe with resistive tip having metal shield... Semiconductor probe with resistive tip having metal shield...

2006-01-03

2008-08-12

Le, Dung A. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Test or calibration structure

C257S684000, C257SE21508, C257SE21577, C438S048000, C438S508000

Reexamination Certificate

active

07411210

ABSTRACT:
A semiconductor probe with a resistive tip and a method of fabricating the semiconductor probe. The resistive tip doped with a first impurity includes a resistive region formed at a peak thereof and lightly doped with a second impurity opposite in polarity to the first impurity, and first and second semiconductor regions formed on sloped sides thereof and heavily doped with the second impurity. The semiconductor probe includes the resistive tip, a cantilever having an end on which the resistive tip is disposed, a dielectric layer disposed on the cantilever and covering the resistive region, and a metal shield disposed on the dielectric layer and having an opening formed at a position corresponding to the resistive region.

REFERENCES:
patent: 5923033 (1999-07-01), Takayama et al.
patent: 6479892 (2002-11-01), Hopson et al.
patent: 6703258 (2004-03-01), Hopson et al.
patent: 6913982 (2005-07-01), Lim et al.
patent: 2003-0041726 (2003-05-01), None
patent: 2003-0044141 (2003-06-01), None
patent: 2003-0087372 (2003-11-01), None
patent: WO 2004/0090971 (2004-10-01), None

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